TRW53601 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TRW53601
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TRW53601 is Designed for
General Purpose Oscillator
Applications up to 2.3 GHz.
FEATURES:
• Diffused Ballast Resistors
• Omnigold™ Metalization System
• Common Emitter
MAXIMUM RATINGS
I_C
400 mA
V_CES
50 V
P_DISS
3.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
31 °C/W
PACKAGE STYLE
1 = COLLECTOR 2 = EMITTER 3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 10 mA
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 250 µA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
P_O
IMD
G_P
VSWR
V_CB = 28 V
V_CE = 20 V
P_IN = .100 W
I_E = 120 mA
f = 1.0 MHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
20
50
45
3.5
0.25
15
120
3.5
.8
-30
8.5
9.5
∞
UNITS
V
V
V
V
mA
---
pF
W
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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