TPV8100B Datasheet, PDF (1/1 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

TTPPVV88110000BB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV8100B is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
• Internal Input, Output Matching
• Common Emitter Configuration
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
12 A
V_CER
P_DISS
T_J
T_STG
θ_JC
40 V R_BE = 10 Ω
215 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.8 ^OC/W
PACKAGE STYLE .438X.450 4LFL
1 = COLLECTOR #1 2 = COLLECTOR
#2
3 = BASE #1 4 = BASE #2
5 = EMITTER CASE (COMMON)
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CER
I_C = 10 mA
R_BE = 75 Ω
BV_CBO
I_C = 20 mA
BV_EBO
I_E = 10 mA
I_CER
V_CE = 28 V
R_BE = 75 Ω
h_FE
V_CE = 10 V I_C = 2.0 A
G_p
V_CE = 28 V I_cq = 2X50 mA
η
V_CE = 28 V I_cq = 2X50 mA
f = 860 MHz
f = 860 MHz
P_out
V_CE = 28 V I_cq = 2X50 mA
1.0 dB COMPRESSION (ref = 25 W)
f = 860 MHz
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
P_out
V_CE = 28 V I_cq = 2X50 mA
P_out
V_CE = 32 V I_cq = 2X25 mA
f = 860 MHz
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
30
65
4.0
10
30
120
8.5
55
100
125
150
UNITS
V
V
V
mA
---
dB
%
W
W
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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