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TPV8100 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR | |||
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TTPPVV88110000B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV8100 is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
⢠Internal Input, Output Matching
⢠Common Emitter Configuration
⢠Gold Metalization
⢠Emitter Ballasting
MAXIMUM RATINGS
IC
12 A
VCER
PDISS
TJ
TSTG
θJC
40 V RBE = 10 â¦
215 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.8 OC/W
PACKAGE STYLE .438X.450 4LFL
1 = COLLECTOR #1 2 = COLLECTOR
#2
3 = BASE #1 4 = BASE #2
5 = EMITTER CASE (COMMON)
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCER
IC = 10 mA
RBE = 75 â¦
BVCBO
IC = 20 mA
BVEBO
IE = 10 mA
ICER
VCE = 28 V
RBE = 75 â¦
hFE
VCE = 10 V IC = 2.0 A
Gp
VCE = 28 V Icq = 2X50 mA
f = 860 MHz
η
VCE = 28 V Icq = 2X50 mA
f = 860 MHz
Pout
VCE = 28 V Icq = 2X50 mA
1.0 dB COMPRESSION (ref = 25 W)
f = 860 MHz
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Pout
VCE = 28 V Icq = 2X50 mA
Pout
VCE = 32 V Icq = 2X25 mA
f = 860 MHz
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
30
65
4.0
10
30
120
8.5
55
100
125
150
UNITS
V
V
V
mA
---
dB
%
W
W
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE ⢠NORTH HOLLYWOOD, CA 91605 ⢠(818) 982-1200 ⢠FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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