TPV6030 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV6030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV6030 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P_G = 9.5 dB at 35 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
15 A
V_CEO
28 V
V_CBO
55 V
V_EBO
4.0 V
P_DISS
160 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.1 °C/W
PACKAGE STYLE .400 BAL FLG(C)
.080x45°
A
B
FULL R
(4X).060 R
E
D
C
.1925
I
F
G
H
N
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.210 / 5.33
C
.120 / 3.05
D
.380 / 9.65
E
.780 / 19.81
F
.435 / 11.05
G
1.090 / 27.69
H
1.335 / 33.91
I
.003 / 0.08
J
.060 / 1.52
K
.082 / 2.08
L
M
.395 / 10.03
N
.850 / 21.59
M
L
JK
MAXIMUM
inches / mm
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 35 mA
BV_CER
I_C = 35 mA
R_BE = 75 Ω
BV_EBO
I_E = 10 mA
I_CER
V_CE = 30 V
R_BE = 75 Ω
h_FE
V_CE = 10 V
I_C = 2.0 A
MINIMUM TYPICAL MAXIMUM
55
40
4.0
10
15
100
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
45
pF
P_G
IMD
P_OUT
V_CC = 25 V
P_OUT = 20 W
V_CE = 25 V
I_C = 4.5 A
I_C = 4.5 A
f = 860 MHz
95
10.5
dB
-52
-51
dBc
f = 860 MHz
35
40
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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