TPV596 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON N-CHANNEL RF POWER MOSFET

TPV596
SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
The TPV596 is Designed for Common
Source Push Pull RF Power
Applications up to 400 MHz.
FEATURES:
PACKAGE STYLE 280 4L STUD
• P_G = 12 dB min. at 0.5 W/ 860 MHz
• Common Emitter
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
0.7 A
V_CE
24 V
T_J
-65 °C to +200 °C
T_STG
P_DISS
-65 °C to +150 °C
8.75 W @ T_C = 25 ^OC
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 20 mA
BV_CBO
I_C = 1.0 mA
BV_CER
I_C = 20 mA
R_BE = 10 Ω
BV_EBO
I_E = 0.25 mA
I_CBO
V_CB = 28 V
h_FE
I_C = 100 mA V_CE = 5.0 V
C_OB
V_CB = 28 V
f = 1.0 MHz
P_G
V_CE = 20 V
I_E = 0.22 A f = 860 MHz
NONE
MINIMUM
24
45
50
3.5
15
11.5
TYPICAL
12
MAXIMUM
0.45
120
5.0
UNITS
V
V
V
V
mA
---
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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