TPV595A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV595A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV595A is Designed for Class
AB Push Pull, Common Emitter from
470 to 860 MHz Applications.
FEATURES:
• Gold Metalization
• Emitter Ballast Resistors
• Internal Input Matching
MAXIMUM RATINGS
I_C
2 x 2.6 A
V_CB
P_DISS
T_J
T _STG
θ _JC
45 V
65 W @ T_C = 25 ^OC
-50 ^OC to +200 ^OC
-50 ^OC to +200 ^OC
2.5 ^OC/W
PACKAGE STYLE .250 BAL FLG
.020 x 45°
E
C
D
F
J
B ^{A Collector - 2 places}
Ø.130 NOM.
.050 x 45°
N
Emitter connected to flange
G
H
Base - 2 places
I
LM
K
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.060 / 1.52
B
.055 / 1.40
.065 / 1.65
C
.125 / 3.18
D
.243 / 6.17
.255 / 6.48
E
.630 / 16.00
.670 / 17.01
F
.092 / 2.34
G
.555 / 14.10
H
.739 / 18.77
I
.315 / 8.00
J
.002 / 0.05
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
K
.055 / 1.40
L
.075 1.91
M
.065 / 1.65
.095 / 2.41
.190 / 4.83
N
.245 / 6.22
.257 / 6.53
Order Code: ASI10835
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 40 mA
BV_CER
I_C = 20 mA
R_BE = 51 Ω
BV_CBO
I_C = 20 mA
I_CBO
V_CB = 20 V
BV_EBO
I_E = 5 mA
h_FE
V_CE = 20 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
25
28
40
45
5.0
3.0
10
UNITS
V
V
V
mA
V
--
C_OB
V_CB = 25 V
20
pF
P_G
V_CE = 25 V
I_C = 2 x 900 mA
P_REF = 14 W
8.5
9.5
dB
F = 860 MHz
IMD₃
Vision = -8 dB Sound = -7 dB SB = -16 dB
-47
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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