TPV593 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV593
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV593 is a Common
Emitter Device Designed for Class A
High Linearity Television Band IV and
V Transmitter Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
I_C
1.2 A
V_CB
P_DISS
T_J
T _STG
θ _JC
45 V
17.5 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
10 ^OC/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 40 mA
BV_CBO
I_C = 10 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 250 mA
NONE
MINIMUM TYPICAL MAXIMUM
26
45
4.0
10
UNITS
V
V
V
---
C_ob
V_CB = 28 V
f = 1.0 MHz
8.0
pF
Po = 2.0 W
SOUND CARRIER = -10 dB
P_G
VISION CARRIER = -8.0 dB
CHROMA = 16 dB
10
V_CE = 25 V
I_C = 410 mA
f = 860 MHz
IMD3
Po = 2.0 W
SOUND CARRIER = -10 dB
VISION CARRIER = -8.0 dB
CHROMA = 16 dB
V_CE = 25 V
I_C = 410 mA
f = 860 MHz
12
dB
-60
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1