TPV591 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV591
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV591 is a Common
Emitter Device Designed for High
Linearity Class A Television Band IV
and V Transmitters.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
300 mA
V_CB
P_DISS
T_J
T _STG
θ _JC
45 V
5.3 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
33.0 ^OC/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 100 mA
NONE
MINIMUM TYPICAL MAXIMUM
22
45
3.5
20
200
UNITS
V
V
V
---
C_ob
V_CB = 28 V
f = 1.0 MHz
3.0
pF
Pref = 0.5 W
P_g
SOUND CARRIER = -7.0 dB
VISION CARRIER = -8.0 dB
f = 860 MHz
13
CHROMA = -16 dB
IMD
Pref = 0.5 W
f = 860 MHz
V_CE = 20 V I_C = 150 mA SOUND CARRIER =-7.0dB
VISION CARRIER = -8.0 dB
CHROMA = -16 dB
dB
-58
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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