TPV590 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV590
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV590 is a Common Emitter
Device Designed for Class A High
Linearity Amplifier Applications in TV
Band IV-V Transmitters.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• High Gain
PACKAGE STYLE 205 4L STUD
MAXIMUM RATINGS
I_C
300 mA
V_CBO
P_DISS
T_J
T _STG
θ _JC
45 V
5.3 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OCto +200 ^OC
33 ^OC/W
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
20
UNITS
V
V
V
---
C_OB
V_CB = 28 V
f = 1.0 MHz
2.0
3.0
pF
V_CE = 20 V
I_C = 150 mA
P_G
P = 0.5 W
OUT
13
f = 860 MHz
14
dB
V_CE = 20 V
I_C = 150 mA
Pref = 0.5 W
IMD₃
Vision = -8dB Chroma = -16dB Sound =-10 dB
-58
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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