TPV5051 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV5051
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV5051 is Designed for AB
Push Pull, Common Emitter from
470 to 860 MHz Applications.
PACKAGE STYLE BMA-2
FEATURES:
• Gold Metalization
• Diffused Ballast Resistor
MAXIMUM RATINGS
I_C
9.0 A
V_CEO
30 V
V_CBO
45 V
P_DISS
97 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.8 °C/W
1 = BASE 2 = BASE 3 = COLLECTOR
4 = COLLECTOR 5 = EMITTER
MILLIMETER
INCHES
S
DIM MIN MAX MIN MAX
A 20.07 20.57 0.790 0.810
B
6.35 6.85 0.250 0.270
C
4.20 5.02 0.165 0.198
D
1.40 1.65 0.055 0.065
E
1.40 1.65 0.055 0.065
G
1.27 1.77 0.060 0.070
H
1.34 2.43 0.076 0.096
J
0.08 0.12 0.003 0.005
K
4.83 5.33 0.190 0.210
N
6.56 6.80 0.258 0.268
Q
3.18 3.42 0.125 0.135
U 14.03 14.52 0.552 0.572
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO I_C = 60 mA
BV_CBO I_C = 20 mA
BV_EBO I_E = 6.0 mA
BV_CER I_C = 10 mA
R_BE = 50 Ω
I_CEO
V_CE = 28 V
h_FE
V_CE = 20 V
I_C = 800 mA
C_ob
V_CB = 28 V
f = 1.0 MHz (EACH SIDE)
MINIMUM TYPICAL MAXIMUM UNITS
30
V
45
V
4.0
V
40
V
10
mA
10
---
40
pF
P_G
V_CE = 28 V
P_out = 50 W
Iq = 2X50 mA
6.5
dB
η_C
f = 860 MHz
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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