TPV5051-1 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV5051-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV5051-1 is Designed for AB
Push Pull, Common Emitter from
470 to 860 MHz Applications.
MAXIMUM RATINGS
I_C
2.6 A (EACH SIDE)
V_CE
P_DISS
T_J
T _STG
θ _JC
25 V
65 W @ T_C = 25 ^OC (TOTAL)
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.5 ^OC/W
PACKAGE STYLE BMA 2A
1 = EMITTER/FLANGE
3 = BASE 2 = CHAMFERED 45°
LEADS = COLLECTOR
MIN:
(In/mm)
A
.060/1.52
B
.055/1.40
C
.124/3.15
D
.234/6.17
E
.635/16.13
F
.092/.234
G
.555/14.10
H
.739/18.77
I
.315/8.00
J
.002/0.05
K
.055/1.40
L
.075/1.91
M
N
.245/6.22
MAX:
(In/mm)
.060/1.52
.065/1.65
.124/3.15
.253/6.34
.665/16.89
.092/.234
.565/14.35
.749/19.02
.327/8.31
.006/0.15
.065/1.65
.095/2.41
.190/4.83
.257/6.53
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 40 mA
BV_CBO
I_C = 20 mA
BV_EBO
I_E = 6.0 mA
h_FE
V_CE = 20 V
I_C = 800 mA
MINIMUM TYPICAL MAXIMUM UNITS
25
V
45
V
4.0
V
10
---
C_ob
V_CB = 28 V
f = 1.0 MHz (EACH SIDE)
40
pF
P_G
V_CE = 28 V
P_out = 50 W
Iq = 2X100 mA
6.5
dB
η_C
f = 860 MHz ⁴⁵
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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