TPV387 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV387
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV387 is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballast Resistors
• Internal Input Matching
•
Common Emitter
MAXIMUM RATINGS
I_C
16 A (CONT)
V_CE
T_J
T _STG
θ _JC
35 V
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
1.0 ^OC/W
PACKAGE STYLE 500 6L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CER
I_C = 100 mA
R_BE = 10 Ω
BV_CBO
I_C = 50 mA
BV_EBO
I_E = 20 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
65
4.0
20
100
UNITS
V
V
V
V
---
C_ob
V_CB = 30 V
f = 1.0 MHz
130
150
pF
G_PE
V_CC = 28 V
P_out = 24 W
f = 225 MHz
13
dB
ψ
V_CC = 28 V ALL PHASEANGLES
f = 225 MHz
NO DEGRADATION IN OUTPUT POWER
P_out = 24 W LOAD VSWR = ∝:1
IMD₁
V_CE = 28 V Pref = 24 W
f = 225 MHz
VISION CARRIER = -8 dB
SOUND CARRIER = -7 dB
SIDEBAND SIGNAL = -16 dB
I_E = 3.5 A
-50
dB
P_o1dB
V_CC = 28 V I_Q = 200 mA
f = 225 MHz
90
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1