TPV385 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV385
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV385 is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballast Resistors
• Internal Input Matching
• Common Emitter
PACKAGE STYLE 500 6L FLG
MAXIMUM RATINGS
I_C
10 A (CONT)
V_CB
65 V
V_CE
35 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
1.5 °C/W
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_CBO
I_C = 50 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
65
4.0
20
100
UNITS
V
V
V
V
---
C_ob
V_CB = 30 V
f = 1.0 MHz
65
85
pF
G_P
IMD₁
V_CE = 28 V
P_out = 14 W
14
f = 225 MHz
15
dB
-53
dB
ψ
V_CE = 28 V ALL PHASEANGLES
f = 225 MHz _{NO DEGRADATION IN OUTPUT POWER}
P_out = 14 W LOAD VSWR = ∝:1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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