TPV376 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV376
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV376 is a Common
Emitter Device Designed for High
Linearity Class A Television Band III
(170-230 MHz) Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
PACKAGE STYLE .550 4L STUD(1/4)
MAXIMUM RATINGS
I_C
16 A
V_CB
P_DISS
T_J
T _STG
θ _JC
60 V
150 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.2 ^OC/W
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CER
I_C = 100 mA
R_BE = 10 Ω
BV_CBO
I_C = 100 mA
BV_EBO
I_E = 20 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
30
60
60
4.0
10
120
UNITS
V
V
V
V
---
C_ob
V_CB = 30 V
f = 1.0 MHz
150
pF
P_out
ψ
IMD₁
V_CE = 28 V
I_C = 3.5 A
f = 225 MHz
V_CE = 28 V
I_E = 3.5 A
LOAD VSWR = ∞:1
PREF =20 W
f = 225 MHz
Pref = 30 W
VISION CARRIER = -8.0 dB
SOUND CARRIER = -7.0 dB SIDEBAND SIG. = -16 dB
V_CE = 28 V
I_E = 3.5 A
f = 225 MHz
20
W
NO DEGRADATION IN OUTPUT POWER
-53
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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