TPV375 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TPV375
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV375 is a Common Emitter
Device Designed for Class A
Television Band III Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
8A
V_CB
P_DISS
T_J
T _STG
θ _JC
65 V
140 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.5 ^OC/W
PACKAGE STYLE .500 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
ORDER CODE: ASI10760
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_CBO
I_C = 50 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
65
4.0
20
120
UNITS
V
V
V
V
---
C_ob
V_CB = 30 V
f = 1.0 MHz
85
pF
G_PE
ψ
IMD₃
V_CE = 28 V
f = 225 MHz
V_CE = 28 V
f = 225 MHz
Vision = -8.0 dB
I_C = 2.5 A
VSWR = ∞:1
I_C = 2.5 A
Snd. = -7.0 dB
P_out = 20 W
P_ref =14 W
SB = -16 dB
8.0
9.0
---
NO DEGRADATION IN OUTPUT POWER
-55
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1