TPR175 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF-MICROWAVE POWER TRANSISTOR

TPR175
NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
DESCRIPTION:
The ASI TPR175 is a common base
transistor Designed for pulsed systems
in the frequency band 1030-1090 MHz.
FEATURES:
• Common Base
• Internal Matching Network
• P_G = 8.0 dB at 175 W/1090 MHz
• Omnigold™ Metalization System
PACKAGE STYLE
MAXIMUM RATINGS
I_C
12.5 A
V_CES
55 V
V_EBO
3.5 V
P_DISS
388 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.45 °C/W
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 20 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 20 mA
MINIMUM TYPICAL MAXIMUM
55
3.5
10
UNITS
V
V
---
P_G
VSRW
η_C
V_CE = 50 V
8.0
P_OUT = 175 W
f = 1090 MHz
9.0
dB
00:1
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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