TPM401 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

TPM401
NPN RF POWER TRANSISTOR
DESCRIPTION:
The TPM401 is a Common Emitter
Device Designed for Class A and AB
Amplifier Applications up to 1.0 GHz.
FEATURES INCLUDE:
• High Gain
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
400 mA
V_CBO
P_DISS
T_J
T _STG
θ _JC
40 V
8.75 W @ T_C = 25 ^OC
-55 ^OC to+200 ^OC
-55 ^OC to+200 ^OC
20 ^OC/W
PACKAGE STYLE 280 4L STUD
1 = Collector 2 = Base
3 & 4 = Emitter
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
40
28
3.5
20
120
UNITS
V
V
V
---
C_OB
V_CB = 28
f = 1.0 MHz
5.0
pF
P_G
V_CE = 24 V
I_C = 200 mA
f = 400 MHz
13
15
dB
P_OUT = 1.0 W
P_1dB
V_CE = 24 V
I_C = 200 mA
f = 400 MHz
2.0
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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