TP9380 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TP9380
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TP9380 is Designed for
Class C, FM Broadcast Applications
up to 108 MHz.
FEATURES:
• Class C Operation
• P_G = 10 dB at 75 W/108 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
10 A
V_CB
60 V
V_CE
35 V
P_DISS
140 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.5 °C/W
PACKAGE STYLE .500 4L FLG
A
FULL R
.112x45°
L
E
C
C
B
B
E
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 10 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10
150
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
85
pF
P_G
η_C
V_CC = 28 V
P_OUT = 75 W
f = 108 MHz
10
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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