TP2314 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

TP2314
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The TP2314 is a High Frequency
Transistor Designed for Large Signal
Power Amplifier Applications, With
Emitter Grounded to Case.
PACKAGE STYLE TO-39 (CE)
MAXIMUM RATINGS
I
1.0 A
V
P_DISS
T_J
T _STG
θ _JC
18 V
8.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
22 ^OC/W
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
BV_CES
BV_CBO
I_CBO
BV_EBO
h_FE
I_C = 10 mA
I_C = 5.0 mA
I_C = 5.0 mA
V_CB = 15 V
I_E = 1.0 mA
V_CE = 5.0 V
I_C = 250 mA
MINIMUM
18
36
36
4.0
5.0
C_ob
V_CB = 15 V
f = 1.0 MHz
G_PE
η
V_CC = 12.5 V P_out = 40 W
f = 175 MHz
50
TYPICAL
MAXIMUM
250
20
0.1
UNITS
V
V
V
µA
V
---
pF
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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