THX15C Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

THX15C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI THX15C is a Common
Emitter Device Designed for High
Linearity Class A/AB HF Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
10 A
V_CB
110 V
P_DISS
233 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
0.75 °C/W
PACKAGE STYLE .550 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 100 mA
V_BE = 0 V
BV_CBO
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 60 V
V_BE = 0 V
I_CEO
V_CE = 30 V
h_FE
V_CE = 6.0 V
I_C = 1.4 A
C_ob
V_CB = 50 V
f = 1.0 MHz
P_g
IMD₃
η_C
V_CE = 50 V
f = 30 MHz
I_cq = 100 mA
P_out =150 W (PEP)
MINIMUM TYPICAL MAXIMUM
55
110
110
4.0
5.0
5.0
22.5
27.0
UNITS
V
V
V
V
mA
mA
---
220
pF
14
dB
-37
-30
dBc
37
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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