TH9030 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TH9030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TH9030 is Designed for
General Purpose Power oscillator
Amplifier Applications up to 2.3 GHz.
FEATURES:
• Common Collector
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
600 mA
V_CEO
20 V
V_CBO
45 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.0 V
7.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
25 ^OC/W
PACKAGE STYLE .250 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
I_CBO
V_CB = 30 V
I_EBO
V_EB = 2.0 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
.25
.25
15
120
UNITS
mA
mA
---
C_OB
V_CB = 20 V
f = 1.0 MHz
1.5
2.5
pF
P_OSC
V_CE = 18 V
I_E = 250 mA
f = 2.3 GHz
1.6
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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