TAN250A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – RF POWER TRANSISTOR

RF POWER TRANSISTOR
TAN250A
DESCRIPTION:
The ASI TAN250A is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
I_C
30 A
V_CB
P_DISS
60 V
575 W @ T_C = 25 ^OC
T_J
T _STG
θ _JC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
0.30 ^OC/W
PACKAGE STYLE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CES
I_C = 25 mA
R_BE = 10 Ω
BV_EBO
I_E = 20 mA
I_CBO
V_CB = 50 V
h_FE
V_CE = 5 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
60
60
4.0
12
20
120
UNITS
V
V
V
mA
---
P_OUT
250
W
P
V_CC = 50 V
P_IN = 13 W f = 960 to 1215 MHz
6.0
7.0
dB
G
η_C
Pulse Width = 20 µS
Duty Cycle = 5 %
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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