SRF4245 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – RF MOS FIELD EFFECT TRANSISTOR

SRF4245
RF MOS FIELD EFFECT TRANSISTOR
DESCRIPTION:
The SRF4245 is Designed for class
AB HF/VHF Aplications up to 200 MH_Z
FEATURES:
• P_G = 8 dB at 150 MHz
• Omnigold™ Metallization System
PACKAGE STYLE .500 4L FLG
MAXIMUM RATINGS
I_D
13.9 A
V_(BR)DS
125 V
V_DGR
125 V
V_GS
P_DISS
T_J
T_STG
θ_JC
± 30 V
215 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.70 (Typ) ^OC/W
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_{(BR) DSS}
V_GS = 0 V
I_D = 100 mA
I_DSS
V_DS = 50 V
V_GS = 0 V
I_GSS
V_GS = 20 V
V_DS = 0 V
V_FEDS(on) V_GS = 10 V
I_D = 10 A
G_FS
V_DS = 10 V
I_D = 5.0 A
MINIMUM TYPICAL MAXIMUM
125
5
1
5
4
UNITS
V
mA
µA
V
mhos
C_ISS
C_OSS
C_RSS
POUT
PG
V_DS = 50 V
V_DS = 50 V
V_GS = 0 V
F = 1.0 MHz
I_DQ = 250 mA
150
F = 150 MH_Z
8
500
250
pF
50
W
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV 0
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