SRF1136 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

SRF 1136
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI SRF 1136 is a Common
Emitter Device Designed for class C
Amplifier Applications up to 1 GHz.
FEATURES INCLUDE:
• High Gain
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
800 mA
V_CBO
P_DISS
T_J
T _STG
θ _JC
36 V
19 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +150 ^OC
7.5 ^OC/W
PACKAGE STYLE 280 4L STUDLESS
1 = Collector
3 = Base
2 & 4 = Emitter
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CEO
I_C = 20 mA
BV_EBO
I_E = 1 mA
h_FE
V_CE = 10 V
I_C = 600 mA
MINIMUM TYPICAL MAXIMUM UNITS
36
V
16
V
3.0
V
25
100
---
C_OB
V_CB = 12.5 V
f = 1.0 MHz
5
pF
*P_G
dB
*η _c
%
* RF SPECIFICATIONS ARE CONTROLLED BY CUSTOMER DRAWING AND ARE PROPRIETARY.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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