SD8250 Datasheet, PDF (1/2 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

SD8250
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD8250 is Designed for Class C
TACAN/DME Applications.
FEATURES:
• Internal Input/Output Matching Network
• Emitter Ballasted.
• P_G = 7.8 dB at 30 W/ 1215 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CC
50 V
P_DISS
575 W @ T_C 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
0.28 °C/W
PACKAGE STYLE .400 2L FLG
N
B
D
L
J
A
O
E
K
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
C
G
F
H
M
P
M IN IM U M
inches / m m
.395 / 10.03
.140 / 3.56
.110 / 2.80
.110 / 2.80
.193 / 4.90
.003 / 0.08
.118 / 3.00
.050 / 1.27
.063 / 1.60
.650 / 16.51
.386 / 9.80
.900 / 22.86
.450 / 11.43
.125 / 3.18
.405 / 10.29
.170 / 4.32
.062 / 1.58
.062 x 45°
Ø.120
I
Q
R
M A X IM U M
inches / m m
.407 / 10.34
.230 / 5.84
.006 / 0.15
.131 / 3.33
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 35 mA
BV_CEs
I_C = 25 mA
BV_EBO
I_E = 15 mA
I_CES
V_CE = 50 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
65
60
4.0
20
10
200
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 50 V P_OUT = 250 W
f = 960 - 1215 MHz
8.0
38
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/2