SD4100 Datasheet, PDF (1/1 Pages) STMicroelectronics – RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS

SD4100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD4100 is a gold mettalized
RF power transistor designed for high
linearity Class-AB operation in UHF
and band IV and V for TV transmitters.
It utilizes emitter ballasting for high
reliability and ruggedness.
FEATURES:
• Common Emitter, Class AB push-pull
• P_G = 8.5 dB at 100 W/860 MHz
• Omnigold™ Metalization System
• 28 V operations
MAXIMUM RATINGS
I_C
16 A
V_CB
65 V
V_CE
30 V
P_DISS
220 W @T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.8 °C/W
PACKAGE STYLE .450 BAL FLG(A)
.060x45°
C
E
3
D
F
K
B
A
11
FULL R
.100x45°
3
22
G
H
J
P
N
M
L
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.055 / 1.40
B
.120 / 3.05
.130 / 3.30
C
.785 / 19.94
D
.455 / 11.56
.465 / 11.81
E
.120 / 3.05
.130 / 3.30
F
.230 / 5.84
G
.838 / 21.28
.850 / 21.59
H
1.095 / 27.81
1.105 / 28.07
J
.525 / 13.34
.535 / 13.59
K
.002 / 0.05
.005 / 0.15
L
.055 / 1.40
.065 / 1.65
M
.080 . 2.03
.095 / 2.41
N
.195 / 4.95
P
.445 / 11.30
.455 / 11.56
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 80 mA
BV_CER
I_C = 120 mA
R_BE = 75 Ω
BV_EBO
I_E = 20 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 4.0 A
P_G
η_C
V_CE = 28 V I_CQ = 2 X 100 mA
P_OUT = 100 W
P_REF = 25 W
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
30
40
3.5
10
25
120
8.5
55
UNITS
V
V
V
mA
---
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1