SD1899 Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

SD1899
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1899 is a Common Base
Device Designed for class C
Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input/Output Matching
• Diffused Ballast Resistors
MAXIMUM RATINGS
I_C
3.8 A
V_CBO
50 V
V_CEO
25 V
P_DISS
66 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
6.5 °C/W
PACKAGE STYLE .250 2L FG
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 25 mA
BV_EBO
I_E = 10 mA
I_CEO
V_CE = 25 V
h_FE
V_CE = 8.0 V
I_C = 400 mA
C_OB
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
50
3.5
25
20
60
100
24
UNITS
V
V
mA
---
pF
P_G
V_CC = 28 V P_out = 30 W
f = 1.6 – 1.7 GHz
7.0
8.2
dB
η_C
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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