SD1732 Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS

SD1732
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1732 is a gold metallized
RF power transistor designed for
Class-A, UHF and band IV and V TV
transmitter applications. It utilizes
emitter ballasting for high reliability and
ruggedness.
FEATURES:
• Common Emitter: Class-A, 25 V
• P_G = 8.5 dB at 14 W/860 MHz
• Omnigold™ Metalization System
• Internal input matching
MAXIMUM RATINGS
I_C
2 x 2.6 A
V_CBO
45 V
V_CEO
25 V
V_EBO
4.0 V
P_DISS
65 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.5 °C/W
PACKAGE STYLE .250 BAL FLG
.020 x 45°
EC
3
D
A
B
11
Ø.130 NOM.
.050 x 45°
N
22
F
J
G
H
I
LM
K
D IM
M INIMUM
inches / mm
A
B
.055 / 1.40
C
D
.243 / 6.17
E
.630 / 16.00
F
G
.555 / 14.10
H
.739 / 18.77
I
.315 / 8.00
J
.002 / 0.05
K
.055 / 1.40
L
.075 1.91
M
N
.245 / 6.22
1 = COLLECTOR
.060 / 1.52
.125 / 3.18
.092 / 2.34
2 = BASE
M A X IM U M
inches / m m
.065 / 1.65
.255 / 6.48
.670 / 17.01
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.257 / 6.53
3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CEO
I_C = 40 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 20 V
I_C = 0.5 A
MINIMUM TYPICAL MAXIMUM
45
25
3.0
10
200
UNITS
V
V
V
---
C_OB
V_CB = 25 V
f = 1.0 MHz
20
pF
P_G
IMD₁
V_CE = 25 V
I_C = 2 x 850 mA
P_OUT = 14 W P_IN = 2.0 W
f = 845 MHz
8.5
-50
TEST CIRCUIT
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
dB
dBc
REV. C
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