SD1530-7 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASI SD1530-7
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1530-7 is a Common
Base Device Designed for DME, IFF
and Tacan Pulse Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Broad Band Performance
MAXIMUM RATINGS
I_C
2.5 A
V_CES
P_DISS
T_J
T _STG
θ _JC
55 V
125 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
1.4 ^OC/W
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 75 mA
BV_EBO
I_E = 25 mA
h_FE
V_CE = 5.0 V
I_C = 300 mA
MINIMUM TYPICAL MAXIMUM
55
4.0
10
UNITS
V
V
---
P_G
V_CC = 50 V P_out = 25 W fo = 960 to 1215 MHz
8.5
10
dB
η_C
PULSE WIDTH = 10 µS
DUTY CYCLE = 1.0%
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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