SD1492-2 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

SD1492-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1492-2 is a Common
Emitter Device Designed for Class A
and AB Amplifier Applications in
Television Band IV & V Transmitters.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Internal Matching
MAXIMUM RATINGS
I_C
25 A
V_CBO
60 V
P_DISS
300 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.55 °C/W
PACKAGE STYLE .450 BAL FLG.(A)
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS (PER SIDE)
BV_CEO
I_C = 100 mA
BV_CBO
I_C = 100 mA
BV_EBO
I_E = 50 Ma
I_CES
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 3.0 A
MINIMUM TYPICAL MAXIMUM
30
60
3.0
10
15
70
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
100
pF
P_OUT
V_CE = 28 V
I_CQ = 2 X 500 mA f = 860 MHz
150
G_P
V_CE = 28 V
P_out = 50 W
I_CQ = 2 X 250 mA f = 860 MHz
6.5
η_C
V_CE = 26.5 V P_out = 25 W
f = 860 MHz
VISION = -8.0dB SOUND = -10 dB CHROMA = -16dB
W
dB
-45
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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