SD1490-1 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

SD1490-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1490-1 is a Common
Emitter Device Designed for Class A
and AB Amplifier Applications in
Television Band IV & V Transmitters.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Internal Matching
MAXIMUM RATINGS
I_C
8.0 A
V_CB
P_DISS
T_J
T_STG
θ_JC
45 V
155 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
1.15 ^OC/W
PACKAGE STYLE .450 BAL FLG.(A)
1 = Collector 2 = Base
3 = Emitter
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS (PER SIDE)
BV_CEO
I_C = 200 mA
BV_CBO
I_C = 50 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 3.0 A
MINIMUM TYPICAL MAXIMUM
30
45
3.0
10
100
UNITS
V
V
V
---
C_OB
V_CB = 28 V
f = 1.0 MHz
72
pF
G_P
V_CE = 26.5 V
I_C = 2 X 1.6 A
f = 860 MHz
8.0
9.0
dB
G_p
V_CE = 28 V
P_out = 50 W
I_C = 2 X 250 mA f = 860 MHz
7.0
8.0
dB
IMD₃
V_CE = 26.5 V P_out = 25 W
f = 860 MHz
VISION = -8.0dB SOUND = -10 dB CHROMA = -16dB
-45
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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