SD1444 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C, MOBILE APPLICATIONS

SD1444
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The ASI SD1444 is
designed for large signal power
amplifier applications operating in the
250-512 MHz range.
FEATURES:
• Common Emitter
• P_OUT = 4.0 Watts
• 12.5 Volts
MAXIMUM RATINGS:
I_C
V_CB
V_CE
P_DISS
T_J
T_STG
θ_JC
0.4 A
36 V
16 V
5.0 W @ T_C = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
35.0 °C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_EBO
I_C = 1.0 mA
I_CBO
V_CE = 15 V
H_FE
V_CE = 5.0 V
I_C = 50 mA
MINIMUM
16
36
4.0
20
C_OB
V_CB = 15.0 V
f = 1.0 MHz
TRANS1.SYM
TYPICAL MAXIMUM
1.0
200
15
G_PE
V_CE = 12.5 V P_OUT = 2.0 W f = 470 MHz
8.0
15
UNITS
V
V
V
mA
---
pF
dB
IMPEDANCE DATA
FREQ
470 MHz
P_OUT = 2.0 W
V_CC = 12.5 V
Z_IN(Ω)
2.9 + j0.6
Z_CL(Ω)
15.6 – j10.2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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