SD1169 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

SD1169
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1169 is a Common
Emitter Device Designed for Class C
Amplifier Applications in HF Land
Mobile Radios.
FEATURES INCLUDE:
• Aluminum Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
6A
V_CB
P_DISS
T_J
T _STG
θ _JC
36 V
80 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.2 ^OC/W
PACKAGE STYLE .500 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 100mA
BV_CEO
I_C = 50mA
BV_EBO
I_E = 10mA
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5
5
UNITS
V
V
V
mA
---
C_OB
V_CB = 12.5 V
f = 1.0 MHz
200
pF
G_PE
η_C
V_CE = 12.5 V
P_OUT = 40 W
f = 88 MHz
6.0
7.5
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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