SD1127 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS

SD1127
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1127 is designed for VHF
mobil communications applications up
to 175 MHz.
FEATURES:
• Grounded Emiter The ASI SD1127
• Gp 12 dB @ 12.5V 175 MHz
• P_out 4.0 V Min.
PACKAGE STYLE TO-39
MAXIMUM RATINGS
I_C
0.64A
V_CB
36 V
V_CE
18 V
P_DISS
8 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
21.9 °C/W
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 5 mA
BV_EBO
I_C = 1.0 mA
I_CBO
V_CE = 15 V
H_FE
V_CE = 5.0 V
I_C = 50 mA
C_OB
V_CE = 15 V
f = 1.0 MHz
G_PE
V_CE = 12.5 V
f = 175 MHz
η
V_CE = 12.5 V P_PUT = 4.0 W f = 175 MHz
IMPEDANCE
V_CC = 12.6 V
V_CC = 12.6 V
V_CC = 12.6 V
P_IN = 0.2 W
P_IN = 0.2 W
P_IN = 0.2 W
f = 136 MHZ
f = 155 MHZ
f = 175 MHZ
MINIMUM
18
36
4.0
10
TRANS1.SYM
TYPICAL MAXIMUM
.25
100
20
12
Z_IN = 3.0 – j3.8
Z_IN = 4.0 – j2.0
Z_IN = 4.3 – j5.8
Z_CL = 12.8 – j11
Z_CL = 11 – j14.8
Z_CL = 13 – j20
UNITS
V
V
V
mA
---
pf
dB
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/1