SD1019-2 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

SD1019-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1019-2 is Designed for
VHF Communications up to 136 MHz
FEATURES:
• P_G = 4.5 dB Minimum at 150 MHz
• Omnigold™ Metallization System
PACKAGE STYLE .380 4 LEAD FLG
MAXIMUM RATINGS
I_C
9.0 A
V_CB
65 V
V_CE
P_DISS
T_J
T_STG
θ_JC
35 V
117 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.7 ^OC/W
1 = COLLECTOR 3 & 4 = EMITTER 2 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
C_OB
V_CB = 30 V
f = 1.0 MHz
POUT
PG
V_CC = 13.5 V
P_IN = 10.6 W
f = 150 MHz
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.5
5.0
UNITS
V
V
V
mA
---
150
pF
30
W
4.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV 0
1/1