S100-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

S100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 100-28 is designed for HF
linear applications up to 30 MHz.
FEATURES:
• P_G = 16 dB min. at 100 W/30 MHz
• High linear power output
• IMD = -32 dBc max. at 100 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CES
70 V
V_CEO
33 V
V_EBO
4.0 V
P_DISS
250 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.7 °C/W
PACKAGE STYLE .500 4L FLG
A
FULL R
.112x45° L
E
C
C
B
B
E
Ø.125 NOM.
E
H
D
G
F
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 10 A
C_ob
V_CB = 28 V
f = 1.0 MHz
G_P
η_C
VSWR
IMD
V_CE = 28 V
P_IN = 2.5 W
P_OUT = 100 W (PEP)
f = 30 MHz
MINIMUM TYPICAL MAXIMUM
33
70
4.0
30
10
100
UNITS
V
V
V
mA
---
---
270
---
pF
16
dB
65
%
∞:1
---
-32
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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