PTF10019 Datasheet, PDF (1/1 Pages) Ericsson – 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF10019
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION:
The ASI PTF10019 is Designed for
Cellular, GSM, and D-AMPS
applicarions from 860 tp 960 MHz.
FEATURES:
• 70 W, 860-960 MHz
• Internally matched
• Omnigold™ Metalization System
• Silicon Nitride Passivated
MAXIMUM RATINGS
V_DSS
65 V
V_GS
±20 V
P_DISS
215 W @ T_C = 25 °C
T_J
-40 °C to +200 °C
T_STG
-40 °C to +150 °C
θ_JC
0.8 °C/W
PACKAGE STYLE
1 = DRAIN
2 = GATE
3 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
V_GS = 0 v
I_D = 25 mA
I_DSS
V_DS = 26 V
V_GS(th)
V_DS = 10 V
I_D = 75 mA
G_fs
V_DS = 10 V
I_D = 3.0 A
MINIMUM TYPICAL MAXIMUM UNITS
65
V
1.0
mA
3.0
5.0
V
3.0
Siemens
P_G
V_DD = 28 V
η_C
f = 960 MHz
P_OUT = 70 W
I_DQ = 600 mA
13.0
45
14.5
50
dB
%
P-1dB
70
75
W
Ψ
10:1
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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