PTB32001X Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN microwave power transistors

PTB32001X
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PTB32001X is Designed for
Common Base General purpose
amplifier Applications up to 4.2 GHz.
FEATURES INCLUDE:
• Diffused Emitter Ballasting Resistor
• Hermetic Flange Package
• Gold Metelization
MAXIMUM RATINGS
I_C
250 mA
V_CBO
40 V
P_DISS
4.2 W @ T_C = 75 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
22 °C/W
PACKAGE STYLE .250 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CES
I_C = 10 mA
I_CBO
V_CE = 24 V
I_EBO
V_EB = 1.5 V
C_cb
V_CB = 24 V
V_EB = 1.5 V
C_ce
V_CB = 24 V
V_EB = 1.5 V
f = 1.0 MHz
f = 1.0 MHz
P_OUT
η_C
G_P
V_CC = 24 V
f = 3.0 GHz
MINIMUM TYPICAL MAXIMUM
40
40
10
0.2
UNITS
V
V
µA
µA
2.2
pF
0.3
pF
1.3
W
35
%
8.0
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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