PTB20111 Datasheet, PDF (1/1 Pages) Ericsson – 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

PTB20111
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PTB20111 is Designed for
General Purpose Class AB Power
Amplifier Applications up to 900 MHz.
FEATURES:
• 25 W, 860-900 MHz
• Silicon Nitride Passivated
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CBO
65 V
P_DISS
159 W @ T_C = 25 °C
T_J
-40 °C to +150 °C
T_STG
-40 °C to +150 °C
θ_JC
1.1 °C/W
PACKAGE STYLE .400 2L FLG
1 = COLLECTOR 2 = EMITTER 3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
25
55
3.5
20
100
UNITS
V
V
V
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P_G
η_C
V_CC = 25 V
I_CQ = 200 mA
P_OUT = 85 W
f = 900 MHz
8.5
50
Ψ
V_CC = 25 V
P_OUT = 60 W
f = 900 MHz
I_CQ = 200 mA
9.5
dB
%
10:1
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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