PTB20101 Datasheet, PDF (1/1 Pages) Ericsson – 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor

PTB20101
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PTB20101 is Designed for
General Purpose Class AB Power
Amplifier Applications up to 860 MHz.
FEATURES:
• 175 W, 470-860 MHz
• Silicon Nitride Passivated
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CBO
65 V
P_DISS
330 W @ T_C = 25 °C
T_J
-40 °C to +150 °C
T_STG
-40 °C to +150 °C
θ_JC
0.53 °C/W
PACKAGE STYLE .860 4L FLG
1,5 = COLLECTOR 3 = EMITTER 2,4 = BASE
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_OB
V_CB = 28 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
25
55
3.5
20
100
3.5
5
UNITS
V
V
V
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pF
P_G
η_C
V_CC = 28 V
I_CQ = 2x200 mA
P_OUT = 110 W
f = 860 MHz
8.5
55
11
58
dB
%
P_OUT
175
W
Ψ
V_CC = 28 V
P_OUT = 175 W
f = 860 MHz
I_CQ = 2x200 mA
5:1
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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