PT9733 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

PT9733
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9733 is an NPN power
transistor designed for 25 V Class-C
ground station transmitters, it utilizes
emitter ballasting and gold metalization
to provide optimum VSWR capability.
FEATURES:
• Common Emitter
• P_G = 6.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.0 A
V_CES
60 V
V_EBO
4.0 V
P_DISS
85 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.1 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
E
ØC
B
D
#8-32 UNC-2A
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 25 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 8.0 mA
I_CES
V_CE = 25 V
h_FE
V_CE = 10 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
35
60
4.0
2.0
20
150
UNITS
V
V
V
mA
---
C_ob
P_G
η_C
VSWR
V_CB = 28 V
V_CE = 28 V
P_IN = 10 W
P_OUT =50 W
f = 1.0 MHz
f = 175 MHz
6.0
60
90
Pf
6.0
dB
60
%
∞
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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