PT9732 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

PT9732
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9732 is a common
Emitter transistor, designed for
broadband amplifier operations in
military, commercial and amateur
communication equipment.
FEATURES:
• P_G = 12 dB min.
• P_OUT = 10 W
• 28 V, 175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
1.25 A
V_CES
65 V
V_CEO
35 V
V_EBO
4.0 V
P_DISS
20 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
8.0 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
F
E
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 25 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 25 V
h_FE
V_CE = 10 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
35
60
4.0
1.0
20
150
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
18
pF
G_P
η
P_SAT
V_CE = 28 V
P_IN = 1.0 W
f = 150 MHz
12
60
10
---
dB
%
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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