PT9704 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

PT9704
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9704 is Designed for
wideband, large-signal amplifier
Applications up to 500 MHz.
FEATURES INCLUDE:
• Gold Metalization
• Diffused Ballast Resistors
• Common Emitter
MAXIMUM RATINGS
I_C
5.0 A
V_CE
30 V
P_DISS
70 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.5 °C/W
PACKAGE STYLE .280" 4L STUD
A
45°
C
BE
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 30 mA
BV_CES
I_C = 30 mA
BV_EBO
I_E = 3.0 mA
I_CBO
V_CB = 30 V
h_FE
I_C = 100 mA V_CE = 5.0 V
MINIMUM TYPICAL MAXIMUM
30
60
4.0
3.0
10
150
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
36
pF
G_PE
7.0
dB
η
V_CE = 28 V
P_OUT = 30 W
f = 400 MHz
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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