PT9702B Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

PT9702B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9702B is a Common
Emitter Device Designed for Class AB
and C Amplifier Applications in the 220
- 400 MHz Military Communications
Band.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
I_C
2.0 A
V_CES
60 V
V_CEO
30 V
P_DISS
40 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
θ_JC
-55 °C to +200 °C
4.0 ^OC/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 20 mA
BV_CES
I_C = 20 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_ob
V_CB = 28 V
f = 1.0 MHz
P_G
η
V_CE = 28 V
P_out = 20 W
C
f = 400 MHz
MINIMUM TYPICAL MAXIMUM
30
60
4.0
2.0
10
150
UNITS
V
V
V
mA
---
24
pF
7.0
dB
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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