PT9701 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

PT9701
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
I_C
1.25 A
V_CES
45 V
P_DISS
14 W @ T_C = 25 °C
T_J
-55 °C to +200 °C
T_STG
-55 °C to +200 °C
θ_JC
12 °C/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 20 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 200 mA
C_ob
V_CB = 28 V
f = 1.0 MHz
P_G
η_C
V_CE = 28 V
P_out = 5.0 W
f = 400 MHz
MINIMUM TYPICAL MAXIMUM
25
45
3.5
15
UNITS
V
V
V
---
7.0
pF
10
12
dB
50
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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