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PT9700 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR
PT9700
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9700 is Designed for
High Power Class C Amplifier, in 225
to 400 MHz Military Communication
Equipment.
FEATURES:
• Class C Operation
• PG = 13 dB at 1.0 W/400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
2.0 A
VCBO
45 V
VCEO
25 V
VEBO
3.5 V
PDISS
31.8 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
20 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCEO
IC = 20 mA
BVEBO
IE = 0.25 mA
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
45
24
3.5
0.45
15
120
UNITS
V
V
V
mA
---
Cob
VCB = 28 V
f = 1.0 MHz
5.0
pF
PG
VCC = 28 V
POUT = 1.0 W
ηD
f = 400 MHz
13
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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