PT6709 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

PT6709
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT6709 is a planar transistor
designed primarily for UHF Class-C,
28 V transmitters. up to 400 MHz.
FEATURES:
• P_G = 4.6 dB min. at 20 W/400 MHz
• η_C = 60 % min. at 20W/400 MHz
• Omnigold™ Metalization System
• Emitter Ballasting
MAXIMUM RATINGS
I_C
3.0 A
V_CBO
60 V
V_CEO
35 V
V_EBO
4.0 V
P_DISS
30 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
5.8 °C/W
PACKAGE STYLE .380 2L FLG
B
E
E
C
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
35
60
4.0
1.0
5.0
UNITS
V
V
V
mA
---
C_ob
V_CB = 30 V
C_ib
V_EB = 0.5 V
f = 1.0 MHz
f = 1.0 MHz
30
pF
96
pF
P_OUT
V_CE = 28 V
f = 136 MHz
20
23
W
G_P
V_CE = 28 V
I_C = 1.19 A
f = 400 MHz
4.6
6.1
dB
η_C
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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