OSC-2.0SM_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

OSC-2.0SM
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI OSC-2.0SM is a high
performance silicon transistor
designed for high power oscillator
applications to 3.0 GHz with typical RF
power of 2.0W
FEATURES:
• P_OUT = 2.0 tTyp. @ 2.5 GHz
• Common Collector
• Low thermal resistance
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
640 mA
V_CBO
45 V
V_CEO
22 V
V_EBO
3.5 V
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
7.0 °C/W
PACKAGE STYLE .230 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
ORDER CODE: ASI10639
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 2.0 mA
BV_CEO
I_C = 40.0 mA
BV_EBO
I_E = 0.5 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
C_OB
V_CB = 28 V
f = 1.0 MHz
P_G
V_CC = 21 V
I_CQ = 300 mA
η_C
P_OUT = 2.5 W
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
45
22
3.5
640
20
120
7
4.5
30
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. E
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