OSC-07L Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

OSC-0.7L
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI OSC-0.7L is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
500 mA
V_CB
P_DISS
T_J
T_STG
θ_JC
40 V
7.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
25 ^OC/W
PACKAGE STYLE TO-46
C
B
ØA
E
F
45°
ØD
G
H
DIM
MINIMUM
inches/mm
MAXIMUM
inches/mm
A
.100 / 2.540
B
.028 / 0.710
.048 / 1.220
C
.035 / 0.890
.046 / 1.170
D
.209 / 5.310
.229 / 5.840
E
.178 / 4.520
.195 / 4.950
F
.065 / 1.650
.085 / 2.160
G
.500 / 12.700
H
.012 / 0.3050
.019 / 0.4830
ORDER CODE: ASI10637
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 18 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
20
40
3.0
100
25
250
UNITS
V
V
V
µA
---
C_OB
V_CB = 18 V
f = 1.0 MHz
5.0
pF
η_C
f_t
P_OSC
V_CC = 18 V
V_CE = 10 V
V_CC = 18 V
P_OUT = 0.7 W
I_E = 100 mA
I_E = 150 mA
f = 1.68 GHz
f = 200 MHz
f = 1.68 GHz
25
2500
700
%
MHz
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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