OSC-03C Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

OSC-0.3C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI OSC-0.3C is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
225 mA
V_CB
P_DISS
T_J
T_STG
θ_JC
25 V
5.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
30 ^OC/W
PACKAGE STYLE .138 2L FLG
A
B
C
F
E
D
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.025 / 0.635
B
.138 / 3.505
C
.275 / 6.985
D
.375 / 9.525
E
.031 / 0.787
F
.062 / 1.575
ORDER CODE: ASI10636
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
I_EBO
I_EB = 1.0 V
I_CBO
V_CB = 15 V
h_FE
V_CE = 8.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
16
25
2.0
500
20
200
UNITS
V
V
µA
µA
---
C_OB
V_CB = 10 V
f = 1.0 MHz
1.5
pF
η_C
V_CC = 12 V
P_OUT = 0.3 W
f = 7.5 GHz
22
%
|S21C|²
V_CE = 8.0 V
I_C = 100 mA
f = 1.0 GHz
4.0
dB
P_OSC
V_CC = 12 V
I_C = 120 mA
f = 7.5 GHz
320
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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